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| IGBT with Diode Combi Pack Short Circuit SOA Capability IXSK 50N60AU1 VCES IC25 VCE(sat) = 600 V = 75 A = 2.7 V Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient T C = 25C, limited by leads T C = 90C T C = 25C, 1 ms V GE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load, L = 30 H V GE = 15 V, VCE = 360 V, TJ = 125C RG = 22 , non repetitive T C = 25C Maximum Ratings 600 600 20 30 75 50 200 ICM = 100 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A s W C C C TO-264 AA G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features q q q q q Mounting torque 0.9/6 Nm/lb.in. 10 300 g C q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-264 AA Guaranteed Short Circuit SOA capability High frequency IGBT and antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 7 750 15 100 2.7 V V A mA nA V q q q q q BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 4 mA, VCE = VGE q AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies V CE = 0.8 * VCES V GE = 0 V V CE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Advantages q q IXYS reserves the right to change limits, test conditions and dimensions. Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost 92822G (4/96) (c) IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSK 50N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 23 190 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 45 88 70 220 200 400 6 70 230 4.5 340 400 7 600 250 60 120 S nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.42 K/W 0.15 K/W TO-264 AA Outline gfs Qg Q ge Q gc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.8 19 175 35 33 50 V A ns ns IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF /dt = 480 A/s VR = 360 V TJ = 125C IF = 1 A; -di/dt = 200 A/s; VR = 30 V TJ = 25C 0.75 K/W IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSK 50N60AU1 Fig. 1 Saturation Characteristics 80 70 60 TJ = 25C VGE = 15V 13V Fig. 2 200 180 160 140 120 100 80 60 40 20 0 5 0 2 4 TJ = 25C Output Characterstics VGE = 15V IC - Amperes 50 40 30 20 10 IC - Amperes 11V 13V 11V 9V 7V 9V 7V 0 0 1 2 3 4 6 8 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 9 8 7 TJ = 25C Fig. 4 1.5 1.4 Temperature Dependence of Output Saturation Voltage VGE=15V IC = 80A VCE(sat) - Normalized 1.3 1.2 1.1 1.0 0.9 IC = 20A IC = 40A VCE - Volts 6 5 4 3 2 1 0 8 9 10 11 12 13 14 15 IC = 20A IC = 40A IC = 80A 0.8 0.7 -50 -25 0 25 50 75 100 125 150 VGE - Volts TJ - Degrees C Fig. 5 Input Admittance 80 VCE = 10V Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.3 BV / VGE(th) - Normalized 70 60 1.2 1.1 1.0 0.9 0.8 0.7 -50 BV CES IC = 3mA IC - Amperes 50 40 30 20 10 0 T J = 125C TJ = - 40C TJ = 25C V GE8th) IC = 4mA 4 5 6 7 8 9 10 11 12 13 -25 0 25 50 75 100 125 150 VGE - Volts (c) IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 TJ - Degrees C IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSK 50N60AU1 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 1000 T J = 125C RG = 10 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 12 1000 T J = 125C IC = 50A 10 8 Eoff tfi - nanoseconds tfi - nanoseconds 750 E off 9 800 Eoff - millijoules 600 tfi 6 4 2 0 500 tfi 6 400 200 0 250 3 0 0 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 IC - Amperes RG - Ohms Fig.9 Gate Charge Characteristic Curve 15 IC = 50A Fig.10 1000 Turn-Off Safe Operating Area 12 V CE = 480V 100 IC - Amperes T J = 125C VGE - Volts 9 6 3 0 10 1 0.1 0.01 RG = 22 dV/dt < 6V/ns 0 50 100 150 200 250 0 100 200 300 400 500 600 700 Qg - nCoulombs VCE - Volts Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W 0.1 Diode IGBT 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Time - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 Eoff - millijoules IXSK 50N60AU1 Fig.12 Typical Forward Voltage Drop 180 160 20 16 Fig.13 Peak Forward Voltage VFR and Forward Recovery Time tfr 1000 VFR T J = 125C IF = 60A Current - Amperes 140 800 600 400 200 0 1200 VFR - Volts 120 100 80 60 40 20 0 0.5 1.0 1.5 T J = 25C T J = 150C T J = 100C 12 8 4 0 tfr 2.0 2.5 0 200 400 600 800 1000 Voltage Drop - Volts diF /dt - A/s Fig.14 Junction Temperature Dependence off IRM and Qr 1.4 1.2 5 Fig.15 T J = 100C Reverse Recovery Chargee Normalized IRM / Qr 1.0 0.8 IRM Qr - nanocoulombs 4 I = 60A F 3 2 1 V R = 350V 0.6 0.4 0.2 0.0 0 40 80 120 160 Qr 0 1 10 100 1000 TJ - Degrees C diF /dt - A/s Fig.16 Peak Reverse Recovery Current 80 TJ = 100C VR = 350V Fig.17 800 Reverse Recovery Time T J = 100C V R = 350V 40 max trr - nanoseconds 60 IF = 60A 600 IF = 60A IRM - Amperes 400 20 200 0 200 400 600 800 1000 0 0 200 400 600 diF /dt - A/s (c) IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 diF /dt - A/s IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 tfr - nanoseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 |
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